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- Dokumenttyp:
- Patent
- Patent, Gebrauchsmuster Nr.:
- US 9177995 B2
- Erfinder:
- Martin Gutsche; Franz Kreupl; Harald Seidl
- Patentanmelder:
- Martin Gutsche; Franz Kreupl; Harald Seidl
- Titel:
- Vertical interconnect structure, memory device and associated production method
- Abstract:
- The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer.
- Anmeldeland:
- US
- Veröffentlichungsdatum / Patent:
- 03.11.2015
- Jahr:
- 2015
- Nachgewiesen in:
- Scopus
- TUM Einrichtung:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX