Schukfeh, M.I.; Hansen, A.; Tornow, M.; Storm, K.; Thelander, K.D.; Thelander, C.; Samuelson, L.; Hinze, P.; Weimann, T.; Wanderka, N.
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
We demonstrate a wet chemical method to selectively etch InP segments within InAs/InP heterostructure nanowires based on a photo-assisted HAc/HBr solution etching process. We successfully etched InP segments ranging from 60 nm down to about 10 nm in size.