Regoliosi, P.; Di Carlo, A.; Reale, A.; Lugli, P., Peroni, M.; Lanzieri, C.; Cetronio, A.
Thermal resistance measurement of GaAs MESFETs by means of photocurrent spectrum analysis and comparison with simulations
e power-dependent behaviour of channel temperature in GaAs MESFETs has been measured by using the photocurrent method. Measurements were performed for different packaging of the MESFET. The effective thermal resistance of the devices has been extracted and related to the packaging. We compared the experimental results to hydrodynamic simulations and derived a suitable expression for the thermal conductivity.
Semicond. Sci. Technol. 20 No 2 (February 2005) 135-139