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- Dokumenttyp:
- Patent
- Patent, Gebrauchsmuster Nr.:
- US 8772749 B2
- Erfinder:
- KREUPL FRANZ, DE ; MAKALA RAGHUVEER S, US ; SEKAR DEEPAK CHANDRA, US
- Patentanmelder:
- KREUPL FRANZ, DE ; MAKALA RAGHUVEER S, US ; SANDISK 3D LLC, US ; SEKAR DEEPAK CHANDRA, US
- Titel:
- [EN] Bottom electrodes for use with metal oxide resistivity switching layers
- Abstract:
- In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.
- Anmeldeland:
- us
- Veröffentlichungsdatum / Patent:
- 08.07.2014
- Jahr:
- 2014
- Sprache:
- en
- Nachgewiesen in:
- Scopus
- TUM Einrichtung:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX