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Document type:
Patentanmeldung 
Patent application number:
JP2013534722 (A) 
Inventor:
KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US] 
Assignee:
KREUPL FRANZ [DE]; BANDYOPADHYAY ABHIJIT [US]; CHEN YUNG TIN [US]; FU CHU CHEN [US]; JAYASEKARA WIPUL PEMSIRI [US]; KAI JAMES [US]; MAKALA RAGHUVEER S [IN]; RABKIN PETER [US]; SAMACHISA GEORGE [US]; ZHANG JINGYAN [US] 
Title:
Memory Cell With Resistance-Switching Layers 
Patent office:
JP 
Publication date application:
05.09.2013 
Year:
2013 
Language:
jp 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text