Benutzer: Gast  Login
Dokumenttyp:
Patentanmeldung 
Patentanmeldung Nr.:
US2013221311(A1) 
Erfinder:
SEKAR DEEPAK C [US]; KREUPL FRANZ [US]; MAKALA RAGHUVEER S [US]; RABKIN PETER [US] 
Patentanmelder:
SEKAR DEEPAK C [US]; KREUPL FRANZ [US]; MAKALA RAGHUVEER S [US]; RABKIN PETER [US] 
Titel:
TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT 
Abstract:
Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the re...    »
 
Anmeldeland:
US 
Veröffentlichungsdatum / Anmeldung:
29.08.2013 
Jahr:
2013 
Sprache:
en 
Nachgewiesen in:
Scopus 
TUM Einrichtung:
Hybride Elektronische Systeme 
Format:
Text