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- Document type:
- Patent
- Patent number:
- US 8216862 B2
- Inventor:
- KREUPL FRANZ, US SEKAR DEEPAK C, US
- Assignee:
- KREUPL FRANZ, US SEKAR DEEPAK C, US
- Title:
- Forming and training processes for resistance-change memory cell
- Patent office:
- US
- Publication date patent:
- 10.07.2012
- Year:
- 2012
- Language:
- en
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX