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- Document type:
- Patentanmeldung
- Patent application number:
- US 2011204316 (A1)
- Inventor:
- KREUPL FRANZ [US]; SEKAR DEEPAK C [US]
- Assignee:
- KREUPL FRANZ [US]; SEKAR DEEPAK C [US]
- Title:
- Structure And Fabrication Method For Resistance-Change Memory Cell In 3-D Memory
- Patent office:
- US
- Publication date application:
- 25.08.2011
- Year:
- 2011
- Language:
- de
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
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