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Document type:
Patentanmeldung 
Patent application number:
US2011310656 (A1) 
Inventor:
KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US] 
Assignee:
KREUPL FRANZ [DE]; FU CHU-CHEN [US]; NIAN YIBO [US] 
Title:
Memory Cell With Resistance-Switching Layers Including Breakdown Layer 
Patent office:
US 
Application number:
US2011310656 (A1) 
Publication date application:
22.12.2011 
Year:
2011 
Language:
en 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text